Method and lithographic structure for measuring lengths of...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C257S048000, C257S797000, C382S172000, C382S172000

Reexamination Certificate

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07393619

ABSTRACT:
There is a structure and method for measuring the lengths of lines and spaces in semiconductor process. In an example embodiment, a lithographic structure (400) comprises, a frame (450). The frame includes a top inside edge, a top outside edge, a bottom inside edge, a bottom outside edge, a left inside edge, a left outside edge, a right inside edge, and a right outside edge. There is a first array of lines (430) and spaces, the first array having end of lines (420b) and end of spaces (430a). The lines have a first line width and the spaces have a first space width; the end of spaces are at a first distance (10) from the top outside edge of the frame (450), the end of lines are at a second distance (20) from the top outside edge of the frame (450). A first opening (410a) is a third distance (30) from the bottom outside edge of the frame and a second opening (410b) is a fourth distance (40) from the bottom outside edge of the frame.

REFERENCES:
patent: 6778275 (2004-08-01), Bowes
patent: 2003/0156276 (2003-08-01), Bowes

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