Method for growing thin oxide films

Details Method for growing thin oxide films Method for growing thin oxide films

2008-05-27

2008-05-27

Kunemund, Robert (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S089000, C117S090000, C117S104000

Reexamination Certificate

active

07377976

ABSTRACT:
A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.

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