Solid state imaging device

Details Solid state imaging device Solid state imaging device

2011-08-23

2011-08-23

Collins, Darryl J (Department: 2873)

Television

Camera, system and detail

Solid-state image sensor

C348S308000

Reexamination Certificate

active

08004589

ABSTRACT:
A signal charge transfer channel region includes a first polysilicon gate electrode as a storage electrode for storing signal charges and a second polysilicon gate electrode as a barrier electrode for transferring the signal charges stored under the first polysilicon gate electrode to under the first polysilicon gate electrode adjacent to the first polysilicon gate electrode. The both end portions of the plurality of first and second polysilicon gate electrodes are alternately arranged perpendicularly to a transfer direction of signal charges and central portions thereof are alternately arranged obliquely to a transfer direction of signal charges.

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patent: 7027093 (2006-04-01), Miyahara
patent: 7176972 (2007-02-01), Mutoh et al.
patent: 2-290074 (1990-11-01), None
patent: 4-367237 (1992-12-01), None
patent: 2000-286409 (2000-10-01), None
patent: 2004-312664 (2004-11-01), None

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