Method of manufacturing dielectric layer and method of...

Coating processes – Electrical product produced – Piezoelectric properties

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S379000, C029S025350

Reexamination Certificate

active

08003161

ABSTRACT:
A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

REFERENCES:
patent: 5851841 (1998-12-01), Ushikubo et al.
patent: 6103072 (2000-08-01), Nishiwaki et al.
patent: 1 369 501 (2003-12-01), None
patent: 1369501 (2003-12-01), None
patent: 9-223830 (1997-08-01), None
patent: 2003-338607 (2003-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing dielectric layer and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing dielectric layer and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing dielectric layer and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2782807

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.