Structure of insulated gate bipolar transistors

Details Structure of insulated gate bipolar transistors Structure of insulated gate bipolar transistors

1988-10-24

1990-10-30

Wojciechowicz, Edward J.

357 2314, 357 38, 357 39, 357 42, 357 43, 357 86, 357 89, H01L 2978

Patent

active

049672460

ABSTRACT:
There is disclosed the structure of an insulated gate bipolar transistor which is formed in an n-type island formed in a p-type substrate and comprises an n-type well and a p-type base in the island in a spacing relationship, n-type and p-type source regions in the n-type well, an n-type drain in the base and an extension projecting from the base, and an integrated circuit is fabricated on the single substrate by virtue of the junction isolations.

REFERENCES:
patent: 4712124 (1987-12-01), Stupp

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