MIM capacitor structure having penetrating vias

Details MIM capacitor structure having penetrating vias MIM capacitor structure having penetrating vias

2011-03-15

2011-03-15

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000, C438S386000, C438S387000, C438S393000, C438S396000

Reexamination Certificate

active

07906832

ABSTRACT:
The semiconductor device according to the present invention includes a plurality of capacitance elements. Each capacitance element has a structure obtained by holding a capacitance film made of an insulating material between first and second electrodes made of a metallic material. The first and second electrodes are so arranged as to partially overlap each other while relatively positionally deviating from each other in a direction orthogonal to the opposed direction thereof. The plurality of capacitance elements are stacked in the opposed direction.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6710425 (2004-03-01), Bothra
patent: 7041569 (2006-05-01), Kar-Roy et al.
patent: 2004/0169255 (2004-09-01), Kiyotoshi
patent: 2005/0263848 (2005-12-01), Cho
patent: 2006/0138595 (2006-06-01), Kiyotoshi
patent: 2003-258107 (2003-09-01), None

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