Semiconductor device

Details Semiconductor device Semiconductor device

2008-01-29

2008-01-29

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S197000

Reexamination Certificate

active

07323728

ABSTRACT:
Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconductor layer and having a material having a first band gap, a second n-type semiconductor layer formed on the p-type semiconductor layer, being smaller than the p-type semiconductor layer in area and having a material having a second band gap larger than the first band gap, an implant portion formed to penetrate the p-type semiconductor layer, the first n-type semiconductor layer, and the n+-type semiconductor layer in a region where the second n-type semiconductor layer is not formed and to divide these layers into two regions, and an electrode formed on a region of the p-type semiconductor layer where the second n-type semiconductor layer is not formed, so as to bridge over the implant portion.

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