Method for growing silicon single crystal and silicon wafer

Details Method for growing silicon single crystal and silicon wafer Method for growing silicon single crystal and silicon wafer

2008-05-20

2008-05-20

Hiteshew, Felisa C (Department: 1792)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S013000, C117S019000, C117S020000, C117S932000

Reexamination Certificate

active

07374741

ABSTRACT:
In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in a portion of a radial cross section of said silicon single crystal and at a pull rate which is slower than that to form an laser scattering tomography defect occurrence region, according to the Czochralski method. This silicon wafer is sampled from a straight body of the silicon single crystal grown using said method for growing a silicon single crystal, and the LPD density of LPD of 0.09 μm or greater in the surface after 10 times of repetitions of the SC-1 cleaning is 0.1/cm2or less.

REFERENCES:
patent: 6569237 (2003-05-01), Tanaka et al.
patent: 6843847 (2005-01-01), Iida et al.
patent: 2006/0156969 (2006-07-01), Hourai et al.
patent: 1598452 (2005-11-01), None
patent: WO2004/083496 (2004-09-01), None

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