Superintegrated V-groove isolated bipolar and VMOS transistors

Details Superintegrated V-groove isolated bipolar and VMOS transistors Superintegrated V-groove isolated bipolar and VMOS transistors

1976-02-06

1977-09-13

Larkins, William D.

357 23, 357 41, 357 50, 357 55, 357 59, 357 60, H01L 2704, H01L 2978, H01L 2972, H01L 2904

Patent

active

040486494

ABSTRACT:
The invention concerns a semiconductor structure having a compatible mixture of bipolar and unipolar transistors. In that structure a monocrystalline p-type silicon substrate is employed which has its 1-0-0 crystallographic planes at a face on which an n epitaxial layer was grown. The epitaxial layer is divided into electrically isolated parts by V-grooves that extend down through the epitaxial layer and have their apices terminating in the substrate. A thin silicon dioxide film coats the V-grooves and those grooves are filled with polycrystallie silicon. Where it is desired to use the polycrystalline silicon as the insulated gate of a field effect transistor, the polycrystalline silicon is electrically conductive. Bases for bipolar transistors are formed by diffusion of an appropriate impurity into selected areas of the epitaxial layer. The emitters, drains, and sources are formed by diffusion of a different impurity. Each field effect transistor has its drain and source on adjacent parts of the epitaxial layer which are separated by the V-groove in which the gate is situated. The base and emitter of a bipolar transistor may be situated on one isolated part and the collector may be situated on an adjacent part separated by a V-groove having an electrically conductive polycrystalline filler.

REFERENCES:
patent: 3500139 (1970-03-01), Frouin et al.
patent: 3622812 (1971-11-01), Crawford
patent: 3639787 (1972-02-01), Lee
patent: 3883948 (1975-05-01), Allison
patent: 3892608 (1975-07-01), Kuhn
patent: 3924265 (1975-12-01), Rodgers
patent: 3956033 (1976-05-01), Roberson
Sanders et al., IEEE International Electron Dev. Meeting, Technical Digest, (Dec. 1973), pp. 38-40.
Declercg, IEEE IEDM Technical Digest (Dec. 1974), pp. 519-522.
Holmes et al., Electronics Letters, vol. 9, No. 19, Sept. 20, 1973, pp. 457-458 (35714 23).

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