High frequency power detector circuit and radio...

Telecommunications – Transmitter – Power control – power supply – or bias voltage supply

Reexamination Certificate

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Details

C455S250100, C455S550100, C327S543000

Reexamination Certificate

active

07995977

ABSTRACT:
First and second envelope detector circuits have, respectively, a resistance row, a capacitative element connected to the resistance row in parallel and a transistor connected between a connection point between the resistance row and the capacitative element and a predetermined voltage node. An output of a level shifter is supplied to a gate or a base of the transistor of the first envelope detector circuit. A predetermined voltage is supplied to a gate or a base of the transistor of the second envelope detector circuit. A detector detects an intermediate terminal voltage of the resistance row of the first envelope detector circuit with reference to a total voltage or an intermediate terminal voltage of the resistance row of the second envelope detector circuit.

REFERENCES:
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patent: 7689181 (2010-03-01), Asam
patent: 2004/0198262 (2004-10-01), Ehrenreich et al.
patent: 2006-505197 (2006-02-01), None
Wong, Stephen L. et al., “A 2.7-5.5 V, 0.2-1 W BiCMOS RF Driver Amplifier IC with Closed-Loop Power Control and Biasing Functions,” IEEE Journal of Solid State Circuits, vol. 33, No. 12, Dec. 1998, pp. 2259-2264.

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