Transparent conductive film, sintered body target for...

Stock material or miscellaneous articles – Composite – Of inorganic material

Reexamination Certificate

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C428S633000, C428S689000, C428S697000, C428S698000, C428S220000, C428S701000, C428S432000, C252S518100, C252S519100, C423S624000, C204S192290

Reexamination Certificate

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07998603

ABSTRACT:
A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10−3Ω·cm to 8.0×10−3Ω·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

REFERENCES:
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patent: 7476343 (2009-01-01), Nakayama et al.
patent: 2007/0051926 (2007-03-01), Nakayama et al.
patent: 2007/0184286 (2007-08-01), Nakayama et al.
patent: 2008/0038529 (2008-02-01), Nakayama et al.
patent: 9-259640 (1997-10-01), None
patent: 2003-335552 (2003-11-01), None
patent: 2004-50643 (2004-02-01), None
Minami T. “Transparent and conductive multicomponent oxide films prepared by magnetron sputtering”. J. Vac. Sci. Technol. A. vol. 17, No. 4 (Jul./Aug. 1999). pp. 1765-1771.
Minami T. “Preparation of highly transparent and conducting Ga2O3-In2O3 films by direct current magnetron sputtering”. J. Vac. Sci. Technol. A. vol. 15, No. 3 (May/Jun. 1997). pp. 958-962.
Shannon et al. “Synthesis and Structure of Phases in the In2O3-Ga2O3 System”. J. Inorg. Nucl. Chem. vol. 30 (1968). pp. 1389-1398.
Binet et al. “Electron magnetic resonance an optical properties of Ga2-2xIn2xO3 solid solutions”. Journal of Physics and Chemistry of Solids, vol. 60, (1999). pp. 1755-1762.
U.S. Appl. No. 12/314,238, Nakayama et al., “Sintered Body Target for . . . Thereon”, filed Dec. 5, 2008 (Division of earlier cited U.S. Pat. No. 7,476,343).
Lipin et al., “Protective Properties of Silicon Nitride . . . Sputtering”, Society of Vacuum Coasters, 1999, pp. 133-135.
Utsumi et al., “Development of an ITO Target Suitable for Spike-less ITO films for Organic EL Display Use”, TOSOH Research & Technology Review, vol. 46 (2002), pp. 11-15.
Partial translation of Utsumi et al.

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