Method of manufacturing self-supporting contacting structures

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE23023

Reexamination Certificate

active

07368324

ABSTRACT:
A self-supporting contacting structure is directly produced on a component that does not have a housing by applying a layer made of non conducting material and a layer made of an electrically conductive material to the component and to a support and by subsequently removing these layers from said support.

REFERENCES:
patent: 5291066 (1994-03-01), Neugebauer et al.
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5637922 (1997-06-01), Fillion et al.
patent: 5653019 (1997-08-01), Bernhardt et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6519840 (2003-02-01), Stalder
patent: 7208347 (2007-04-01), Seliger et al.
patent: 2002/0039464 (2002-04-01), Yoshimura et al.
patent: 2003/0015774 (2003-01-01), Auburger et al.
patent: 2006/0252253 (2006-11-01), Seliger et al.
patent: 91 09 295 (1991-11-01), None
patent: 100 04 410 (2001-08-01), None
patent: WO 95/09438 (1995-04-01), None
Paavo Jalonen, “A new concept® for making fine line substrate for active component in polymer”, Microelectronics Journal, Feb. 2003, pp. 99-107, vol. 34, No. 2, Mackintosh Publications Ltd., Luton, Germany.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing self-supporting contacting structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing self-supporting contacting structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing self-supporting contacting structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2775236

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.