Solid-state imaging device, method for manufacturing the...

Details Solid-state imaging device, method for manufacturing the... Solid-state imaging device, method for manufacturing the...

2008-04-15

2008-04-15

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S075000, C257S291000, C257S292000, C257SE27133

Reexamination Certificate

active

07358105

ABSTRACT:
A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.

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