Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-15

2008-04-15

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S700000, C257SE23173

Reexamination Certificate

active

07358609

ABSTRACT:
A semiconductor device having a structure which can be manufactured with a higher yield includes a local interconnection layer14(a first interconnection layer) on a semiconductor substrate10and a global interconnection layer18(a second interconnection layer) on the local interconnection layer14.The local interconnection layer14and the global interconnection layer18include a local interconnection24(a first interconnection) and a global interconnection28(a second interconnection), respectively, and the global interconnection28is thicker than the local interconnection24.The local interconnection layer14and the global interconnection layer18also have a dummy interconnection34(a first dummy interconnection) and a dummy interconnection38(a second dummy interconnection), respectively. The dummy interconnection34is narrower than the dummy interconnection38.

REFERENCES:
patent: 6452274 (2002-09-01), Hasegawa et al.
patent: 6707156 (2004-03-01), Suzuki et al.
patent: 2001/0022399 (2001-09-01), Koubuchi et al.
patent: 2003/0034567 (2003-02-01), Sato et al.
patent: 2003/0173674 (2003-09-01), Nakamura
patent: 2005/0093160 (2005-05-01), Otsuka
patent: 2002-231815 (2002-08-01), None
patent: 2004-039951 (2004-02-01), None

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