Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-03-27
1998-09-01
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518909, G11C 1606
Patent
active
058019880
ABSTRACT:
A circuit for the generation of a voltage as a function of the conductivity of an elementary cell, particularly for non-volatile memories, including a non-volatile element that is substantially identical to a generic cell of a memory matrix; a structure for biasing the drain terminal of the non-volatile element; a branch for sensing the current that flows through the non-volatile element; and a branch for mirroring the current sensed by the current sensing branch, the mirroring branch containing at least one transistor the gate terminal whereof is controlled by a first output voltage. The mirroring branch produces the first output voltage, the value whereof is a function of the current that flows through the non-volatile element and is sensed by the current sensing branch, and the biasing structure produces a second voltage that is substantially constant and is used as a reference voltage for the first voltage.
REFERENCES:
patent: 4954990 (1990-09-01), Vider
patent: 5258959 (1993-11-01), Dallabora
patent: 5289412 (1994-02-01), Frary
patent: 5448159 (1995-09-01), Kojima et al.
patent: 5541880 (1996-07-01), Campardo
patent: 5621686 (1997-04-01), Alexis
Mai Son
Nelms David C.
SGS--Thomson Microelectronics S.r.l.
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