Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-04-08
2008-04-08
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE25006, C257SE25027, C257SE25029, C257SE25030, C257SE25031, C257SE25032, C257S532000, C257S535000, C257S536000, C257S723000, C257S724000, C257S725000, C257S728000, C257S528000, C257S685000, C257S686000, C257S777000
Reexamination Certificate
active
07355264
ABSTRACT:
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.
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Chen Yinchao
Degani Yinon
Fan Yu
Gao Charley Chunlei
Sun Kunquan
Sychip Inc.
Wilde Peter V. D.
Williams Alexander Oscar
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