Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2008-05-20
2008-05-20
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S314000, C257S315000
Reexamination Certificate
active
07375387
ABSTRACT:
The invention provides an integration scheme for a memory cell array, especially a charge-trapping memory cell array, comprising an architecture of local interconnects, which enables to avoid nitride insulations of wordline stacks and to produce CMOS devices of different structures and dimensions in standard technology along with the tinier memory cell transistors.
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Infineon - Technologies AG
Menz Douglas M.
Slater & Matsil L.L.P.
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