Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

Filed on

2008-01-29

Date issued

2008-01-29

Examiner

Toledo, Fernando L. (Department: 2823)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Non-single crystal, or recrystallized, semiconductor...

SubSubClass

Amorphous semiconductor material

Other Related Categories

C438S149000, C438S158000

Type

Reexamination Certificate

Status

active

Patent number

07323715

Description

ABSTRACT:
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.

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