Plasma etching method, plasma etching apparatus, control...

Details Plasma etching method, plasma etching apparatus, control... Plasma etching method, plasma etching apparatus, control...

2008-04-01

2008-04-01

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S723000, C438S734000, C438S743000

Reexamination Certificate

active

07351665

ABSTRACT:
In a first step and a thirst step, etching gases are used which contain fluorocarbon gases having C/F atom number ratios higher than that in a second step. A hole is formed to a midpoint in a silicon oxide film in the first step, the hole is formed until a base SiN film begins to be exposed or immediately before it is exposed in the second step, and overetching is performed in the third step. This enables even a hole having a fine diameter and a high aspect ratio to be formed in an excellent shape.

REFERENCES:
patent: 6620741 (2003-09-01), Gracias et al.
patent: 6660652 (2003-12-01), Kim et al.
patent: 2000-150413 (2000-05-01), None
patent: 2002-141336 (2002-05-01), None
patent: 2001-004177 (2001-01-01), None

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