Via hole structure with a conductive layer formed therein

Details Via hole structure with a conductive layer formed therein Via hole structure with a conductive layer formed therein

2011-08-16

2011-08-16

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S621000, C257S698000, C257SE21476, C257SE23010

Reexamination Certificate

active

07999389

ABSTRACT:
A via hole structure and a manufacturing method thereof are provided. The via hole structure is disposed on a substrate. The substrate has a through hole, which passes through the substrate from a top surface to a bottom surface. The via hole structure comprises a conductive layer, several first conductive lines and several second conductive lines. The conductive layer having several conductive sections is disposed on the inner wall of the through hole. The first conductive lines are adjacent to the top surface for connecting the top ends of the conductive sections. The second conductive lines are adjacent to the bottom surface for connecting the bottom ends of the conductive sections. The conductive sections, the first conductive lines and the second conductive lines are serially connected to form a three-dimension layout.

REFERENCES:
patent: 2002/0095770 (2002-07-01), Ahn et al.

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