Photomask defect correction method employing a combined...

Details Photomask defect correction method employing a combined... Photomask defect correction method employing a combined...

2008-05-20

2008-05-20

Kim, Robert (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C430S004000, C430S005000

Reexamination Certificate

active

07375352

ABSTRACT:
In order to make it possible to improve throughput of AFM scratch processing, enable correction of small defects in clear defect correction with a high degree of precision, and enable correction in a shorter period of time in the event of overcutting by AFM scratch processing, throughput of AFM scratch processing is increased by maximizing high-resolution of the electron beam device and minimizing the time taken in observations using a device incorporating both an electro-optical system and an AFM head in a vacuum, correcting small clear defects with high precision by eliminating portions left over from AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material, and correction in a short time is made possible by eliminating portions remaining using AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material also in cases of overcutting in AFM scratch processing.

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Boegli, et al. “Electron-beam induced processes and their applicability to mask repair,” Proc. of SPIE, vol. 4889 (2002).

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