Sensing scheme for low-voltage flash memory

Details Sensing scheme for low-voltage flash memory Sensing scheme for low-voltage flash memory

2008-07-22

2008-07-22

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185250, C365S203000, C365S210130

Reexamination Certificate

active

07403423

ABSTRACT:
Single-ended sensing devices for sensing a programmed state of a non-volatile memory cell are adapted for use in low-voltage memory devices. Methods of their operation include precharging an input node of a single-ended sensing device to a precharge potential while the input node is coupled to a source/drain region of a non-volatile memory cell, applying a reference current to the input node, driving a control gate of the non-volatile memory cell, isolating the input node from the precharge potential and sensing a potential level at the input node while applying the reference current. The potential level at the input node is indicative of the programmed state of the non-volatile memory cell.

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