Process for fabricating a structure for epitaxy without an...

Details Process for fabricating a structure for epitaxy without an... Process for fabricating a structure for epitaxy without an...

2011-03-08

2011-03-08

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S458000, C257SE21122, C257SE21567

Reexamination Certificate

active

07902045

ABSTRACT:
A process for fabricating a composite structure for epitaxy, including at least one crystalline growth seed layer of semiconductor material on a support substrate, with the support substrate and the crystalline growth seed layer each having, on the periphery of their bonding face, a chamfer or an edge rounding zone. The process includes at least one step of wafer bonding the crystalline growth seed layer directly onto the support substrate and at least one step of thinning the crystalline growth seed layer. After thinning, the crystalline growth seed layer has a diameter identical to its initial diameter.

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Preliminary Search Report corresponding to FR0755512.
Anke Sanz-Velasco et al., “Room Temperature Wafer Bonding Using Oxygen Plasma Treatment in Reactive Ion Etchers With and Without Inductively Coupled Plasma”, Journal of the Electrochemical Society vol. 150 , No. 2, pp. G 155-G162 (2003).

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