Single-crystal silicon-on-glass from film transfer

Details Single-crystal silicon-on-glass from film transfer Single-crystal silicon-on-glass from film transfer

2008-04-22

2008-04-22

Robinson, Mark A. (Department: 4122)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S752000, C438S926000, C438S933000

Reexamination Certificate

active

07361574

ABSTRACT:
A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.

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