Organic thin film transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S411000, C257SE51007

Reexamination Certificate

active

07994495

ABSTRACT:
An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.

REFERENCES:
patent: 4269682 (1981-05-01), Yano et al.
patent: 6586791 (2003-07-01), Lee et al.
patent: 7029945 (2006-04-01), Veres et al.
patent: 2003/0158371 (2003-08-01), Akamine et al.
patent: 2004/0222412 (2004-11-01), Bai et al.
patent: 2006/0231908 (2006-10-01), Liu et al.
patent: 2006/0234430 (2006-10-01), Liu et al.
patent: 2006/0284166 (2006-12-01), Chua et al.
patent: 2007/0075308 (2007-04-01), Dotz et al.
patent: 2009/0267057 (2009-10-01), Setayesh et al.
patent: WO 2004022620 (2004-03-01), None
Khandpur, A.K., et al. Macromol., vol. 28 (1995): pp. 8796-8806.
McCulloch, I., et al. Nat. Mater,. vol. 5 (2006): pp. 328-333.
Bourgeat-Lami, E. & Lang, J. J. Colloid & Int. Sci., vol. 197 (1998): pp. 293-308.

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