Method of manufacturing semiconductor devices in which oxide reg

Details Method of manufacturing semiconductor devices in which oxide reg Method of manufacturing semiconductor devices in which oxide reg

1977-06-03

1978-07-04

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 91, H01L 21265, H01L 2176

Patent

active

040986187

ABSTRACT:
A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxidation. In order to prevent the formation of a projecting oxide beak under the masking layer a nitride oxidation mask is applied directly to the substrate which has been previously ion-implanted to a controlled depth and then annealed to generate a dense dislocation network array on the substrate surface to prevent mechanical stress defects which normally would occur when a nitride mask is applied directly to a substrate.

REFERENCES:
patent: 3900345 (1975-08-01), Lesk
patent: 3900350 (1975-08-01), Appels et al.
patent: 3961999 (1976-06-01), Antipov
patent: 3966501 (1976-06-01), Nomura et al.
Makris et al., "Forming Fine-line Geometries in Integrated Circuits," IBM-TDB, 16, (1974), 3240.
KO et al., "An Ion-Implantation Process for Making Bipolar Devices," IBM-TDB, 19, (1976), 1704.

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