Semiconductor optical modulation device

Details Semiconductor optical modulation device Semiconductor optical modulation device

1996-02-07

1998-09-01

Moskowitz, Nelson

Optical: systems and elements

Optical modulator

Light wave temporal modulation

359256, 359229, 257 17, G02F 1025, H01L 31107

Patent

active

058018727

ABSTRACT:
The invention provides a semiconductor optical modulation device which has low power dissipation, high extinction ratio and high speed response features. An n-type InP clad layer, an n.sup.- -type InAlAs-InAlGaAs composition inclination multiple layer, a p-type InP clad layer and a p.sup.+ -type InGaAs contact layer are layered on an n-type InP substrate. The layers are etched up to an intermediate location of the n-type clad layer to form a rib waveguide, and a positive electrode is formed on an upper portion of the rib waveguide. Further, a negative electrode is formed on the substrate.

REFERENCES:
patent: 5204539 (1993-04-01), Tsuyi et al.
patent: 5471068 (1995-11-01), Tsuyi et al.
patent: 5517350 (1996-05-01), Cabera et al.
patent: 5539221 (1996-07-01), Tsuyi et al.
patent: 5617446 (1997-04-01), Ishibashi et al.
Ryu et al, Thin Solid Films (Swiss), vol. 248, #1, pp. 63-68, Aug. 1994; Abst. only herewith.
H. Sano et al., "InGaAs/InAIAs MQW Optical Modulator", Technical Report of the Group for the Study of Photon Electronics of the Electronic Information Communication Society of Japan, No. OQE91-57, pp. 69-74.
S. Nishimura, Electrooptic Effects in an InGaAs/InAIAs Multiquantum Well Structure, IEEE Photonics Technology Letters, 4(10): 1123-1126 (1992).
Hiroshima et al. "Quantum-confined Stark Effect in Graded-gap Quantum Wells", Journal of Applied Physics, Oct. 15, 1987, USA, vol. 62, No. 8, pp. 3360-3365.
Saunders "Absorptive Electro-Optic Spatial Light Modulators: Effect of Well Profile on Device Performance", Applied Physics Letters, Sep. 4, 1989, USA, vol. 55, No. 10, pp. 930-932.
Chang et al. "Optical Properties of Hg/sub 1-x/Cd/sub x/Te Sawtooth Suerlattices", Journal of Applied Physics, Jul. 15, 1989, USA, vol. 66, No. 2, pp. 928-834.
Sasaki et al. "Novel Structure Photonic Devices Using Selective MOVPE Growth", NEC Research and Development, Jul. 1992, Japan, vol. 33, No. 3, pp. 372-382.
Aoki et al. "New Photonic Device Integration by Selective-Area MOVPE and Its Application to Optical Modulator/Laser Integration", Microwave and Optical Technology Letters, Feb. 20, 1994, vol. 7, No. 3, pp. 132-139.

Affiliated with

Also associated with

Rating

Semiconductor optical modulation device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor optical modulation device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor optical modulation device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-275979