Multilayer wiring substrate for providing a capacitor...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C257SE23062, C257S023000, C257SE23097, C257S701000, C257S528000, C257S532000, C257S288000, C257S296000, C257S773000, C257S774000, C257SE27104, C257SE27081, C257SE27112, C257SE27048, C257S698000, C257S778000, C361S306100, C361S311000, C361S782000, C174S050510, C174S260000, C174S565000

Reexamination Certificate

active

07352060

ABSTRACT:
A multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring structure is disclosed. The multilayer wiring substrate includes a dielectric layer including a resin material mixed with an inorganic filler, wherein the inorganic filler is fabricated by mixing a paraelectric filler with an inorganic filler having a high dielectric constant.

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patent: 2003-68923 (2003-03-01), None

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