One transistor EEPROM cell using ferro-electric spacer

Details One transistor EEPROM cell using ferro-electric spacer One transistor EEPROM cell using ferro-electric spacer

1999-08-19

2000-12-19

Phan, Trong

Static information storage and retrieval

Floating gate

Particular biasing

365145, 257295, G11C 1604, G11C 1122

Patent

active

061634824

ABSTRACT:
A new one-transistor EEPROM cell structure using a spacer of ferro-electric material (e.g. PZT or BST). The spacer's polarization can be alterable and is used as the storage element of digital information. This new cell offers small cell size, low voltage operation, high endurance, fast write operation, and full function EEPROM compared to conventional EEPROM or F-RAMS.

REFERENCES:
patent: 5119329 (1992-06-01), Evans, Jr. et al.
patent: 5666305 (1997-09-01), Mihara et al.

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