Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-01-08
2008-01-08
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S347000, C257S350000, C257S408000, C349S042000, C349S043000, C349S047000
Reexamination Certificate
active
07317209
ABSTRACT:
In a method for manufacturing a TFT device, a metal thin film is formed on a gate insulation film. Patterning is performed to remove the metal thin film on a semiconductor layer, and phosphorous ions are implanted using the patterned metal thin film as a mask to form the source and drain regions. The patterned metal thin film is further patterned to form a gate electrode of an n-type TFT. Phosphorous ions are implanted using the gate electrode as a mask to form LDD regions between the source and drain regions and a channel region.
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Hotta Kazushige
Kurosawa Yoshio
Erdem Fazli
Greer Burns & Crain Ltd.
Pert Evan
Sharp Kabushiki Kaisha
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