Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-04-29
2008-04-29
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S028000, C257S213000, C257SE29072
Reexamination Certificate
active
07365357
ABSTRACT:
A strained transistor includes a silicon transistor, an encapsulating layer of silicon insulating material with an outer surface, and a stress inducing multilayer cap deposited on the outer surface of the encapsulating layer with at least two layers including a layer of rare earth oxide and a layer including silicon. The stress inducing cap can be designed to provide either compressive strain or tensile strain and virtually any desired amount of strain without producing dislocations, defects, and fractures in the structure.
REFERENCES:
patent: 2005/0199958 (2005-09-01), Chen et al.
patent: 2005/0224879 (2005-10-01), Xiang
patent: 2005/0263825 (2005-12-01), Frohberg et al.
patent: 2006/0284282 (2006-12-01), Cunningham
Atanackovic Petar B.
Lebby Michael
Goltry Michael W.
Ho Tu-Tu
Parsons Robert A.
Parsons & Goltry
Translucent Inc.
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