Thyristor with reduced central zone thickness

Details Thyristor with reduced central zone thickness Thyristor with reduced central zone thickness

1990-12-04

1992-03-03

Hille, Rolf

357 39, 357 43, 357 234, H01L 2974, H01L 29747, H01L 2702, H01L 2910

Patent

active

050937057

ABSTRACT:
To avoid punch-through breakdown in conventional thyristors in off-state condition, the central zone (1) must be made so thick that at nominal off-state voltage a sufficient distance remains between the space charge region and the opposite pn junction. Contact regions are provided in the invention for drawing off the charge carriers produced during an off-state load condition. These contacts are disposed on the anode and cathode side at the central zone in the vicinity of the anode-side emitter zone (2) and the cathode-side base zone (3). As a result, the space charge region is allowed to be moved closer to the pn junction without the occurrence of a punch-through breakdown.

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H. Assalit et al., "Descr. of Tech. for Red. Thry. Turn-Off Time", IEEE Trans. on Elec. Dev., vol. ED-21 #7, Jul. 1974, pp. 416-420.
"Insulated-Gate Planar Thyristors: I-Structure and Basic Operation", by Plummer et al., IEEE Trans. on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 380-387.

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