Semiconductor device having a semiconductor region in which a ba

Details Semiconductor device having a semiconductor region in which a ba Semiconductor device having a semiconductor region in which a ba

1989-09-28

1992-03-03

Jackson, Jr., Jerome

357 4, 357 16, 357 2, H01L 2904, H01L 2916, H01L 2970

Patent

active

050937049

ABSTRACT:
An improved semiconductor device such as an improved graded band gap transistor and an improved graded band gap diode, characterized by comprising a non-single-crystal material containing silicon atom, a band gap adjusting atom and a localized level reducing atom and having a region in which a band gap being continuously graded at least one position other than junction position and only one of a conduction band and a valence band being continuously graded. It gives a significant improvement in both the frequency characteristic and the photoresponse.

REFERENCES:
patent: 4254429 (1981-03-01), Yamazaki
patent: 4353081 (1982-10-01), Allyn
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4710786 (1987-12-01), Ovshinsky et al.

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