Single trench repair method with etched quartz for...

Details Single trench repair method with etched quartz for... Single trench repair method with etched quartz for...

2008-07-01

2008-07-01

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07393617

ABSTRACT:
In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.

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patent: 2002/0058188 (2002-05-01), Iwasaki et al.
patent: 2005/0058912 (2005-03-01), Lin et al.

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