Single gate structure with oxide layer therein

Details Single gate structure with oxide layer therein Single gate structure with oxide layer therein

1991-04-08

1992-03-03

Hille, Rolf

Fishing, trapping, and vermin destroying

357 2315, 357 59, 357 235, 357 54, 437191, H01L 2701, H01L 2978, H01L 2904, H01L 2934

Patent

active

050937006

ABSTRACT:
A FET transistor has a gate structure consisting of at least three layers of polysilicon with a thin oxide layer on the order of atoms thick separating each of the layers. A method for formation of the multilayer gate structure and the formation of resistors comprised of layers of polysilicon separated by oxide layers are also provided.

REFERENCES:
patent: 4142926 (1979-03-01), Morgan
patent: 4494301 (1985-01-01), Faraone

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