Method of manufacturing a magnetoresistive sensor with a...

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S603080, C029S603130, C029S603120, C427S130000, C427S131000, C428S811200, C428S812000

Reexamination Certificate

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07313856

ABSTRACT:
A manufacturing method for a spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises forming a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and forming a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer. A cap layer is deposited over the thin AFM layer.

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patent: 6396669 (2002-05-01), Gill
patent: 6404606 (2002-06-01), Pinarbasi
patent: 6778364 (2004-08-01), Dobisz et al.
patent: 7035060 (2006-04-01), Li et al.
patent: 4-100202 (1992-04-01), None
IBM Technical Disclosure Bulletin, NN 9604147, “Continuous Spacer Spin Valve Structure”, vol. 39, Issue 4, Apr. 1996.
Hong et al., “Effect of Thin Oxide Capping on Interlayer Coupling in Spin Valves”, IEEE Transactions on Magnetics, vol. 36, No. 5, pp. 2629-2631, Sep. 2000.

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