Method for forming STI of semiconductor device

Details Method for forming STI of semiconductor device Method for forming STI of semiconductor device

2008-05-13

2008-05-13

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

07371656

ABSTRACT:
A method for forming a STI of a semiconductor device includes steps of sequentially forming a pad oxide film and a pad nitride film on the semiconductor device and carrying out a pattern process PR; etching the pad oxide film and the nitride film and carrying out a cleaning process; selectively growing epitaxial silicon; and carrying out liner oxidation on the epitaxial silicon and carrying out CMP so as to form an oxidation fill and STI.

REFERENCES:
patent: 6221733 (2001-04-01), Li et al.
patent: 2005/0009295 (2005-01-01), Chan et al.
patent: 2005/0095807 (2005-05-01), Xiang
patent: 2002019287 (2002-03-01), None

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