Non-volatile memory electronic device with NAND structure...

Details Non-volatile memory electronic device with NAND structure... Non-volatile memory electronic device with NAND structure...

2008-07-08

2008-07-08

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185230

Reexamination Certificate

active

07397700

ABSTRACT:
A non-volatile memory electronic device is integrated on a semiconductor and is of the Flash EEPROM type with an architecture of the NAND type including at least one memory matrix organized in rows or word lines and columns or bit lines of memory cells and with at least one associated row decoding circuit portion. Advantageously, the matrix includes at least one logic sector with pairs of rows or word lines being short-circuited with each other and referring to a respective biasing terminal, one for each pair, and in that the row decoding circuit portion includes a single select block which controls a single multiplexer for the logic sector for the regulation of the signals applied to the biasing terminals.

REFERENCES:
patent: 5732018 (1998-03-01), Choi et al.
patent: 2005/0232012 (2005-10-01), Park
patent: 2006/0245233 (2006-11-01), Mikolajick et al.

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