Integrated circuit having a memory including a low-k...

Details Integrated circuit having a memory including a low-k... Integrated circuit having a memory including a low-k...

2008-04-22

2008-04-22

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C257SE45002, C257SE31029

Reexamination Certificate

active

07361925

ABSTRACT:
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

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Ha, Y. H. et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” Symposium on VLSI Technology Digest of Technical Papers, pp. 2, (2003).
Horii, H. et al., “A Novel Cell Technology Using N-Doped GeSbTe Films for Phase Change RAM,” symposium on VLSI Technology Digest of Technical Papers, pp. 2, (2003).

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