Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-08
2008-04-08
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S226000
Reexamination Certificate
active
07355894
ABSTRACT:
A flash memory device has an array of flash memory cells, a detector for detecting an external voltage applied to the flash memory device, and a command control circuit for controlling access to the array of flash memory cells. The command control circuit is adapted to perform a method of programming one or more of the flash memory cells when the external voltage exceeds a predetermined value and when the command control circuit receives a program command. The method includes, in response to the program command and the detected external voltage, applying an internally-generated programming voltage to a control gate of the one or more flash memory cells and applying a voltage pulse to a drain of the one or more flash memory cells while the control gate is at the internally-generated programming voltage.
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Gualandri Steve
Pekny Theodore T.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Tran Michael T
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