Contact structure and method

Details Contact structure and method Contact structure and method

1989-03-27

1990-10-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, 437 52, H01L 2144, H01L 2148

Patent

active

049668641

ABSTRACT:
A semiconductor device structure including a contact and a method for its fabrication are disclosed. In accordance with one embodiment of the disclosure, a contact is formed between a monocrystalline silicon substrate and an overlying silicon layer. A silicon substrate is provided which has a first insulating layer formed thereon. A layer of silicon is deposited and patterned over the insulator layer. The patterned silicon layer is then oxidized and a contact opening is etched through the first insulator layer and the silicon dioxide is expose portions of the silicon substrate and an adjacent portion of the patterned silicon layer. A further layer of polycrystalline silicon is then selectively deposited onto the exposed portions of the substrate and silicon layer to form an electrical connection between the two.

REFERENCES:
patent: 3921282 (1975-11-01), Cunningham et al.
patent: 4290188 (1981-09-01), Ichinose et al.
patent: 4619037 (1986-10-01), Taguchi et al.
patent: 4685197 (1987-08-01), Tigelaar et al.
patent: 4717449 (1988-01-01), Erie et al.
patent: 4808261 (1989-02-01), Ghidini et al.
patent: 4808555 (1989-02-01), Mauntel et al.
patent: 4874719 (1989-10-01), Kurosawa
patent: 4877483 (1989-10-01), Bergemont et al.

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