Fishing – trapping – and vermin destroying
Patent
1988-03-24
1990-10-30
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 41, 437 32, H01L 21265
Patent
active
049668609
ABSTRACT:
A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.
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Matsunami et al., "Heteroepitaxial Growth of --SiC on Silicon Substrate Using SiCl.sub.4 --C.sub.3 --H.sub.8 --H.sub.2 System", Journal of Crystal Growth, vol. 42, 1978, pp. 138-143.
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Furukawa Katsuki
Suzuki Akira
Chaudhuri Olik
Sharp Kabushiki Kaisha
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