Method of fabricating a lateral semiconductor structure includin

Details Method of fabricating a lateral semiconductor structure includin Method of fabricating a lateral semiconductor structure includin

1989-11-02

1990-10-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 41, 437 45, 437 47, 437 50, 437 60, 437 61, 437 69, 437150, 437917, 437924, 437984, 148DIG13, 148DIG45, 148DIG167, H01L 21328

Patent

active

049668587

ABSTRACT:
A method of fabricating a lateral semiconductor structure includes providing a semiconductor substrate and forming wells therein. Following formation of a dielectric layer on the substrate, field region openings are formed through which field regions are implanted into the substrate. The self-aligned formation of field oxidation regions to the field region openings then occurs and is followed by the formation of field plates on the field oxidation regions. A first active device region is then formed in said substrate, the formation of which is self-aligned to the field plates. This is followed by the formation of a second active device region in the first active device region which is also self-aligned to the field plates. The resulting structure allows for high speed devices that maintain consistently high current gain without sacrificing Early or breakdown voltages.

REFERENCES:
patent: 4308549 (1981-12-01), Yeh
patent: 4414560 (1983-11-01), Lidow
patent: 4561170 (1985-12-01), Doering et al.
patent: 4789810 (1989-01-01), Blanchard et al.
patent: 4904614 (1990-02-01), Fisher et al.
patent: 4914051 (1990-04-01), Huie et al.
patent: 4918026 (1990-04-01), Kosiak et al.

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