Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2008-04-29
2008-04-29
Gurley, Lynne (Department: 2811)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S634000, C438S636000, C257SE21453
Reexamination Certificate
active
07364924
ABSTRACT:
An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
REFERENCES:
patent: 6517740 (2003-02-01), Kataoka et al.
patent: 7202596 (2007-04-01), Tang et al.
J. Ruan et al APL vol. 83, #26, Dec. 26, 2003 p. 1-3.
A. Polman, J. Appl. Phys. 82 (1), Jul. 1, 1997 p. 1-39.
R. Chen et al, APL vol. 84, #9, 2004, p. 1552-1554.
Barrowcliff Robert A.
Hsu Sheng Teng
Stecker Gregory M.
Zhang Fengyan
Gebremariam Samuel A
Gurley Lynne
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
LandOfFree
Silicon phosphor electroluminescence device with nanotip... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon phosphor electroluminescence device with nanotip..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon phosphor electroluminescence device with nanotip... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2743994