Semiconductor laser and method of making semiconductor laser

Details Semiconductor laser and method of making semiconductor laser Semiconductor laser and method of making semiconductor laser

2011-06-07

2011-06-07

Van Roy, Tod T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S099000

Reexamination Certificate

active

07957446

ABSTRACT:
A semiconductor laser includes a first optical confinement layer, a plurality of first quantum wires and buried semiconductor regions disposed on a first area, a plurality of second quantum wires and buried semiconductor regions disposed on a second area, an active layer disposed on a third area, and a second optical confinement layer. The plurality of first quantum wires and the buried semiconductor regions constitute a first distributed Bragg reflector, and the plurality of second quantum wires and the buried semiconductor regions constitute a second distributed Bragg reflector. The third area is disposed between the first area and the second area. The buried semiconductor regions have a refractive index different from the average refractive index of the first quantum wires and the average refractive index of the second quantum wires. These distributed Bragg reflectors form a DBR laser having a cavity length defined by the length of the active layer.

REFERENCES:
patent: 2003/0063647 (2003-04-01), Yoshida et al.
patent: 2007/0253456 (2007-11-01), Yagi
patent: 63-255985 (1988-10-01), None
K. Shinoda et al., “Highly reliable operation of InGaAlAs/InGaAsP intergrated lasers”, the 19thinternational conference on Indium Phospide and related materials (IPRM 2007), TuB2-3,39, May 15, 2007.

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