Method for fabricating buried capacitor structure

Details Method for fabricating buried capacitor structure Method for fabricating buried capacitor structure

2011-01-18

2011-01-18

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S238000, C438S243000, C438S253000, C438S387000, C438S393000, C257SE21602

Reexamination Certificate

active

07871892

ABSTRACT:
A method for fabricating a buried capacitor structure includes: laminating a first dielectric layer having a capacitor embedded therein with a second dielectric layer to bury the capacitor therebetween; forming a first circuit pattern on a first metal layer of the first dielectric layer and a second circuit pattern on a second metal layer of the second dielectric layer; depositing a first insulating layer and a second insulating layer on the first metal layer and the second metal layer, respectively; electrically connecting a positive electrode end and a negative electrode end of the capacitor to the second metal layer by a positive through-hole and a negative through-hole, thereby manufacturing the buried capacitor structure.

REFERENCES:
patent: 2009/0200638 (2009-08-01), Smith

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