Semiconductor structure and method of manufacturing same

Details Semiconductor structure and method of manufacturing same Semiconductor structure and method of manufacturing same

2011-06-14

2011-06-14

Speer, Timothy M (Department: 1784)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S457000, C257SE21476

Reexamination Certificate

active

07960036

ABSTRACT:
A semiconductor structure and method of manufacturing the semiconductor structure, and more particularly to a semiconductor structure having reduced metal line resistance and a method of manufacturing the same in back end of line (BEOL) processes. The method includes forming a first trench extending to a lower metal layer Mx+1 and forming a second trench remote from the first trench. The method further includes filling the first trench and the second trench with conductive material. The conductive material in the second trench forms a vertical wiring line extending orthogonally and in electrical contact with an upper wiring layer and electrically isolated from lower metal layers including the lower metal layer Mx+1. The vertical wiring line decreases a resistance of a structure.

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Office Action for corresponding Chinese Application No. 200810144702.1.

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