Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-03-29
2011-03-29
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S079000, C257S088000, C257S094000, C257S095000, C257S096000, C257S097000, C257S098000, C257S099000, C257SE33005, C257SE33059, C257SE33062, C257SE33065, C257SE33067, C257SE33068
Reexamination Certificate
active
07915623
ABSTRACT:
A light emitting diode array in which, when viewed from the above, the shape of an almost square light emitting diode is square-chamfered or round-chamfered at the corners thereof in order to minimize light leakage at a reverse mesa surface to allow an electrode layer to surround the three directions of a light emitting unit, and part in the vicinity of the corner of the reverse mesa surface is extended up to a substrate unit to cover it. Accordingly, the light emitting diode array minimized in light leakage at the reverse mesa surface can be provided.
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International Search Report of PCT/JP2005/004976 date of mailing Jun. 21, 2005.
Kimachi Hajime
Yamamoto Hironori
Jackson, Jr. Jerome
Kim Jay C
Sanyo Electric Co,. Ltd.
Tottori Sanyo Electric Co. Ltd.
Westerman Hattori Daniels & Adrian LLP
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