Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2011-07-05
2011-07-05
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S618000, C257S628000, C257S627000, C257S626000, C257SE21038, C438S700000, C438S243000, C438S386000
Reexamination Certificate
active
07973388
ABSTRACT:
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.
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Fucsko Janos
Lee Whonchee
Wells David H.
Green Telly D
Micro)n Technology, Inc.
Smith Zandra
TraskBritt
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