Vertical semiconductor light-emitting device and method of...

Details Vertical semiconductor light-emitting device and method of... Vertical semiconductor light-emitting device and method of...

2011-03-22

2011-03-22

Luu, Chuong A (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S047000, C257SE33025

Reexamination Certificate

active

07910389

ABSTRACT:
Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.

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Korean Office Action in corresponding Korean Application No. 10-2005-0058640, with English Translation, Mar. 24, 2008.

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